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data sheet high sensitivity cmos hall-effe ct latch ah921 jul. 2011 rev. 1. 2 bcd semiconductor manufacturing limited 1 general description the ah921 is a hall-effect latch designed in mixed signal cmos technology. it is quite suitable for use in automotive, industrial and consumer applications. superior high-temperature performance is made possible through dynamic offset cancellation, which reduces the residual offset voltage normally caused by device over-molding, temperature dependencies, and thermal stress. the device integrates a voltage regulator, hall-voltage generator, small-signal amplifier, chopper stabilization, schmitt trigger, and is directly drivable by the output. an on-board regulator permits operation with supply voltage from 3.5v to 24v. the ah921 is available in to-92s-3 and sot-23-3 packages, which are optimized for most applications. features ? wide operating voltage range from 3.5 to 24v ? symmetrical switch points ? chopper-stabilized amplifier stage ? superior temperature stability ? compact size ? built-in pull-up resistor ? esd rating: 3500v (human body model) applications ? brushless dc motor commutation ? brushless dc fan ? solid-state switch ? revolution counting ? speed detection ? high sensitivity and unconnected switch figure 1. package types of ah921 to-92s-3 sot-23-3
data sheet high sensitivity cmos hall-effe ct latch ah921 jul. 2011 rev. 1. 2 bcd semiconductor manufacturing limited 2 pin configuration z3 package n package (to-92s-3) (sot-23-3) 1 2 3 3 2 1 (front view) (top view) figure 2. pin configuration of ah921 pin description pin number to-92s-3 sot-23-3 pin name function 1 1 vcc supply voltage 2 3 gnd ground pin 3 2 out output pin
data sheet high sensitivity cmos hall-effe ct latch ah921 jul. 2011 rev. 1. 2 bcd semiconductor manufacturing limited 3 functional block diagram hall sense chopper switch reference voltage amp vcc 1 (1) out 3 (2) 2 (3) gnd a (b) a for to-92s-3 b for sot-23-3 100k figure 3. functional block diagram of ah921 ordering information ah921 - circuit type package z3: to-92s-3 n: sot-23-3 package temperature range part number marking id packing type to-92s-3 ah921z3-g1 921 bulk sot-23-3 -40 to 125c ah921ntr-g1 gs6 tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green. g1: green tr: tape & reel blank: bulk
data sheet high sensitivity cmos hall-effe ct latch ah921 jul. 2011 rev. 1. 2 bcd semiconductor manufacturing limited 4 absolute maximum ratings (note 1) parameter symbol value unit supply voltage v cc 28 v supply current (fault) i cc 5 ma output current (continuous) i out 25 ma to-92s-3 400 power dissipation p d sot-23-3 230 mw operating temperature t a -50 to 150 oc storage temperature t stg -65 to 150 oc maximum junction temperature t j (max) 165 oc esd (human body model) esd 3500 v note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. recommended operating conditions parameter symbol min max unit supply voltage v cc 3.5 24 v operating temperature t a -40 125 oc
data sheet high sensitivity cmos hall-effe ct latch ah921 jul. 2011 rev. 1. 2 bcd semiconductor manufacturing limited 5 electrical characteristics v cc =12v, t a =25c, unless otherwise specified. parameter symbol conditions min typ max unit supply voltage v cc operating 3.5 12 24 v v cc =12v, bb op 3.0 5.0 ma saturation voltage v sat i out =20ma, b>b op 185 500 mv output leakage current i leakage v cc =v out =24v, b data sheet high sensitivity cmos hall-effe ct latch ah921 jul. 2011 rev. 1. 2 bcd semiconductor manufacturing limited 6 magnetic characteristics (continued) south pole output=low (for to-92s-3) north pole output=high (for to-92s-3) figure 5. output status vs. magnetic pole package type parameter test condition output south pole b b op low to-92s-3 north pole b b rp high south pole b b op high sot-23-3 north pole b b rp low table 1. output status vs. magnetic pole
data sheet high sensitivity cmos hall-effe ct latch ah921 jul. 2011 rev. 1. 2 bcd semiconductor manufacturing limited 7 magnetic characteristics (continued) figure 6. magnetic thresholds note 2: b op is determined by putting the device under magnetic field swept from b rp (min) to b op (max) until the output is switched on. note 3: b rp is determined by putting the device under magnetic field swept from b op (max) to b rp (min) until the output is switched off. test circuit and test conditions figure 7. test circuit of ah921
data sheet high sensitivity cmos hall-effe ct latch ah921 jul. 2011 rev. 1. 2 bcd semiconductor manufacturing limited 8 test circuit and test conditions (continued) figure 8. test condition of ah921 (supply current) note 4: output initial status is low when powering on. note 5: the supply current i cc represents the average supply current. the output is open during measurement. note 6: the device is put under the magnetic field: bb op.
data sheet high sensitivity cmos hall-effe ct latch ah921 jul. 2011 rev. 1. 2 bcd semiconductor manufacturing limited 9 test circuit and test conditions (continued) figure 10. test condition of ah921 (output leakage current) note 9: the device is put under the magnetic field: b data sheet high sensitivity cmos hall-effe ct latch ah921 jul. 2011 rev. 1. 2 bcd semiconductor manufacturing limited 10 typical performance characteristics (continued) figure 13. b op /b rp /b hys vs. v cc figure 14. b op /b rp /b hys vs. t a 0 5 10 15 20 25 0 20 40 60 80 100 120 140 160 180 v sat (mv) i out (ma) t a =25 o c v cc =12v figure 15. v sat vs. i out figure 16. v sat vs. t a 4 8 12 16 20 24 -20 -10 0 10 20 30 40 50 b op /b rp /b hys (gauss) v cc (v) t a =25 o c b op b rp b hys -25 0 25 50 75 100 125 -20 -10 0 10 20 30 40 b op /b rp /b hys (gauss) t a ( o c) v cc =12v b op b rp b hys -25 0 25 50 75 100 125 100 120 140 160 180 200 220 240 v sat (mv) t a ( o c) v cc =5v v cc =12v
data sheet high sensitivity cmos hall-effe ct latch ah921 jul. 2011 rev. 1. 2 bcd semiconductor manufacturing limited 11 typical performance characteristics (continued) 0 255075100125150 0 50 100 150 200 250 300 350 400 450 p d (mw) t a ( o c) sot-23-3 to-92s-3 figure 17. p d vs. t a typical application c l 0.1 f output v cc figure 18. typical application circuit of ah921
data sheet high sensitivity cmos hall-effe ct latch ah921 jul. 2011 rev. 1. 2 bcd semiconductor manufacturing limited 12 mechanical dimensions to-92s-3 unit: mm(inch)
data sheet high sensitivity cmos hall-effe ct latch ah921 jul. 2011 rev. 1. 2 bcd semiconductor manufacturing limited 13 mechanical dimensions (continued) sot-23-3 unit: mm(inch) 2.650(0.104) 2.950(0.116) 1.500(0.059) 1.700(0.067) 0.300(0.012) 0.600(0.024) 1.450(0.057) max.
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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